FF200R12KT3HOSA1

Overview

The FF200R12KT3HOSA1 is a dual IGBT module from Infineon's 62mm C-series, utilizing fast Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency diode. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 295 A at 25°C (200 A at 80°C). The module has a total power dissipation of 1050 W, with a typical saturation voltage of 1.70 V at 25°C. Thermal resistance from junction to case is 0.12 K/W for the IGBT and 0.20 K/W for the diode. Operating temperature ranges from -40°C to 125°C.

Feature Summary

• Fast switching performance enabled by Trench/Fieldstop IGBT3 technology
• High efficiency integrated diode with low reverse recovery charge
• Robust short-circuit capability up to 800 A for 10 µs
• Standardized 62 mm mechanical footprint for easy integration

Applications

• Industrial motor drives and inverters
• Uninterruptible Power Supplies (UPS)
• Induction heating systems
• Commercial and agricultural vehicles
• Solar inverter applications

Procurement Notes

Verify the complete part number including the HOSA1 suffix against official Infineon documentation to ensure correct RoHS compliance and specific manufacturing lot details. Confirm that the ordering information matches the exact technical revision required for your design. Always cross-reference the latest datasheet version before finalizing procurement specifications.

Selection Notes

Select this module for high-power applications requiring robust short-circuit withstand capability and efficient switching. Ensure the thermal management system can maintain the junction temperature within the specified -40°C to 125°C range. Verify that the gate drive circuit provides the recommended ±15 V swing and appropriate external resistors to control switching speeds and minimize electromagnetic interference.

Part Context

This component belongs to Infineon's 62mm C-series IGBT modules, designed for industrial and traction applications. It represents the third generation of Trench/Fieldstop technology, offering improved switching characteristics compared to previous generations. The module integrates both N-channel IGBTs and anti-parallel diodes in a single flange-mount package.

Replacement Considerations

Direct replacements include FF200R12KE3HOSA1 (IGBT3 standard) or FF200R12KT4HOSA1 (IGBT4 technology). Verify pinout compatibility and thermal resistance differences when substituting. Ensure the replacement module meets the same voltage and current ratings for your specific application requirements.