FF200R17KE4HOSA1

FF200R17KE4HOSA1

$92.40
  • Description:IGBT MOD 1700V 310A 1250W
  • Series:C

SKU:56fb926f509e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT MOD 1700V 310A 1250W
  • Series:C
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:2 Independent
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 200A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):310 A
  • Power - Max:1250 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:18 nF @ 25 V

Download product information

FF200R17KE4HOSA1

Overview

The FF200R17KE4HOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 310 A at 25°C. The module incorporates an emitter-controlled diode with a forward voltage (VF) of 1.95 V at 150°C. Key electrical parameters include a maximum power dissipation of 1250 W, a gate-emitter peak voltage of ±20 V, and a junction temperature range of -40°C to +150°C. Thermal resistance from junction to case is 0.12 K/W for the IGBT and 0.16 K/W for the diode.

Feature Summary

  • Incorporates fast Trench/Fieldstop IGBT4 technology combined with an Emitter Controlled 4 diode for optimized switching performance.
  • Features an isolated base plate design with high creepage and clearance distances to ensure robust insulation.
  • Provides extended operation temperature capability with a positive temperature coefficient for VCEsat to support parallel operation.

Applications

  • High power converters
  • Motor drives
  • UPS systems
  • Wind turbines

Procurement Notes

Verify the specific ordering suffix HOSA1 against official documentation to confirm compliance with RoHS directives and lead time requirements. Confirm that the component matches the standard housing dimensions and mounting torque specifications outlined in the datasheet before finalizing procurement orders.

Selection Notes

Select this module for applications requiring 1700 V blocking capability and high current handling up to 310 A. Ensure the thermal management system can maintain the junction temperature within the specified operating range. Verify that the gate drive circuitry supports the required ±15 V signal levels and internal gate resistor characteristics.

Part Context

This component belongs to the 62mm C-Series module family manufactured by Infineon Technologies. It utilizes silicon technology and is designed as a half-bridge configuration. The module is part of the Trenchstop IGBT4 product line, offering enhanced robustness and efficiency compared to previous generations.

Replacement Considerations

FF200R17KE4

FF200R17KE4HOSA1FF200R17KE4HOSA1
$92.40
Buy Now