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The FF200R17KE4HOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 310 A at 25°C. The module incorporates an emitter-controlled diode with a forward voltage (VF) of 1.95 V at 150°C. Key electrical parameters include a maximum power dissipation of 1250 W, a gate-emitter peak voltage of ±20 V, and a junction temperature range of -40°C to +150°C. Thermal resistance from junction to case is 0.12 K/W for the IGBT and 0.16 K/W for the diode.
Verify the specific ordering suffix HOSA1 against official documentation to confirm compliance with RoHS directives and lead time requirements. Confirm that the component matches the standard housing dimensions and mounting torque specifications outlined in the datasheet before finalizing procurement orders.
Select this module for applications requiring 1700 V blocking capability and high current handling up to 310 A. Ensure the thermal management system can maintain the junction temperature within the specified operating range. Verify that the gate drive circuitry supports the required ±15 V signal levels and internal gate resistor characteristics.
This component belongs to the 62mm C-Series module family manufactured by Infineon Technologies. It utilizes silicon technology and is designed as a half-bridge configuration. The module is part of the Trenchstop IGBT4 product line, offering enhanced robustness and efficiency compared to previous generations.
FF200R17KE4