FF200R33KF2CNOSA1

Overview

The FF200R33KF2CNOSA1 is a dual IGBT module manufactured by Infineon Technologies, designed for high-power traction and industrial applications. It features a 3300V collector-emitter voltage rating (VCES) and supports a continuous collector current of up to 330A at 85°C. The device utilizes TRENCHSTOP™ 7 technology to optimize switching performance and conduction losses. Key electrical parameters include a maximum repetitive peak collector current of 400A and a typical saturation voltage (VCEsat) ranging from approximately 3.4V to 4.3V depending on gate drive conditions. The module integrates an NTC thermistor for thermal monitoring and operates within a junction temperature range of -40°C to +175°C.

Feature Summary

• Incorporates TRENCHSTOP™ 7 technology for optimized switching characteristics and reduced power losses in high-voltage environments.
• Integrated negative temperature coefficient (NTC) thermistor enables precise real-time thermal monitoring and protection.
• Dual configuration allows efficient implementation of half-bridge circuits in traction inverters and industrial drives.
• Robust packaging design ensures reliable operation under high mechanical stress and extreme thermal cycling conditions.

Applications

• Electric vehicle traction inverters
• Industrial motor drives
• High-power renewable energy systems

Procurement Notes

Verify the complete ordering code including suffixes such as CNOSA1 to ensure correct component identification. Confirm RoHS compliance status and specific package variants with the manufacturer or authorized distributors before procurement. Check for end-of-life notices or alternative recommendations if the part is discontinued.

Selection Notes

Select this module for applications requiring high voltage blocking capability and significant current handling capacity. Ensure the cooling system can manage the thermal dissipation associated with the specified power losses. Verify that the gate driver provides appropriate voltage levels and current capabilities to support the module's switching speed requirements.

Part Context

This component belongs to Infineon's high-voltage IGBT module portfolio, specifically engineered for demanding power conversion tasks. It represents a generation of devices leveraging advanced trench gate technology to improve efficiency compared to previous generations. The module is part of a series designed to meet the rigorous reliability standards required in automotive and heavy industrial sectors.

Replacement Considerations

Consult official Infineon documentation for qualified replacement parts or pin-compatible alternatives. Verify that any substitute matches the voltage, current, and thermal specifications exactly. Cross-reference datasheets to ensure compatibility with existing gate drive and cooling infrastructure.