FF225R65T3E3P5BPMA1

Overview

The FF225R65T3E3P5BPMA1 is an XHP™3 IGBT module utilizing Trench/Fieldstop technology. It features a collector-emitter voltage (VCES) of 6500 V and a nominal continuous DC collector current (ICDC) of 225 A at 80 °C case temperature. The device includes an integrated emitter-controlled diode with a forward current rating of 225 A. Key electrical parameters include a typical saturation voltage of 3.4 V at 25 °C and a repetitive peak collector current of 450 A. The module employs an AlSiC base plate for thermal cycling capability and provides enhanced insulation with a partial discharge extinction voltage of 5.1 kV.

Feature Summary

• High-voltage insulation system with comparative tracking index exceeding 600
• Robust mechanical design featuring an aluminum silicon carbide base plate
• Railway vehicle fire protection compliance through R23 (HL3) housing material classification
• Low on-state voltage drop achieved via Trench IGBT 3 technology

Applications

• Traction drives
• Medium-voltage converters

Procurement Notes

Verify the specific ordering suffix P5BPMA1 against official Infineon documentation to confirm exact packaging, marking, or environmental compliance variations relative to the standard FF225R65T3E3 base part number. Ensure that the component meets all relevant industrial qualification standards such as IEC 60747 prior to integration into final designs.

Selection Notes

Select this module for high-power applications requiring 6500 V blocking capability and robust thermal performance. Consider the 29.1 K/kW thermal resistance for heatsink sizing. Verify gate drive requirements against the specified internal gate resistor and switching energy losses to ensure optimal efficiency within the intended operating temperature range.

Part Context

This component belongs to the XHP™3 series from Infineon Technologies, designed for high-reliability power conversion. The series utilizes advanced trench fieldstop technology to optimize switching losses and conduction characteristics. It is specifically engineered for demanding industrial environments where high voltage isolation and thermal stability are critical operational requirements.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Direct replacements must match the 6500 V rating, 225 A current capacity, and AG-XHP3K65 package dimensions to maintain mechanical and electrical compatibility in existing assemblies.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCES) is rated at 6500 V when the junction temperature is at 125 °C.

Does the module include an integrated diode?

Yes, the module contains an emitter-controlled 3 diode with a continuous forward current rating of 225 A.

What material is used for the base plate?

The module utilizes an Aluminum Silicon Carbide (AlSiC) base plate to enhance thermal cycling capability.