FF2MR12KM1PHOSA1

FET, MOSFET Arrays Overview

The FF2MR12KM1PHOSA1 is a CoolSiC MOSFET half-bridge module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and features a 62 mm package with screw mount installation. The device supports a drain-source breakdown voltage of 1.2 kV and provides a continuous drain current of 500 A. Key electrical parameters include a maximum on-resistance of 2.13 mOhms, a gate-source voltage range of -10 V to +20 V, and a threshold voltage of 3.45 V. Operating temperatures span from -40 C to +150 C.

FET, MOSFET Arrays Feature Summary

• Utilizes CoolSiC trench MOSFET technology for high-efficiency power switching
• Integrated half-bridge configuration within a compact 62 mm form factor
• Designed for industrial-grade reliability and robust thermal performance

FET, MOSFET Arrays Applications

• Uninterruptible Power Supply (UPS) systems
• Solar energy applications
• DC/DC converters
• Energy Storage Systems (ESS)
• EV DC chargers

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix PHOSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm availability status as this component may be subject to obsolescence or end-of-life notices. Ensure compatibility with required gate drive voltages and thermal management solutions before procurement.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high current density and low switching losses in a standard 62 mm footprint. Consider the 1.2 kV rating and 500 A continuous current capability when designing for medium-power inverters or converters. Verify that the operating junction temperature limits align with the system's thermal design constraints.

FET, MOSFET Arrays Part Context

This component belongs to the CoolSiC MOSFET family, specifically utilizing M1H technology variants. It is part of Infineon's portfolio of silicon carbide discrete semiconductor modules designed to replace traditional silicon IGBTs in high-frequency applications. The module integrates both high-side and low-side switches in a single package.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics when considering equivalent modules from other manufacturers.