FF300R12KE4B2HOSA1

Overview

The FF300R12KE4B2HOSA1 is a 62mm C-series IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It utilizes M5 power terminals and has a collector-emitter voltage of 1200 V. The continuous DC collector current is 300 A at TC=100°C and 460 A at TC=25°C, with a repetitive peak collector current of 600 A. Total power dissipation reaches 1600 W at TC=25°C. Collector-emitter saturation voltage ranges from 1.75 V to 2.15 V depending on temperature. Gate-emitter peak voltage is +/-20 V. Operating junction temperature spans -40°C to 150°C.

Feature Summary

• Incorporates Trench/Fieldstop IGBT4 technology for optimized switching performance.
• Features an integrated Emitter Controlled Diode for inverter applications.
• Equipped with M5 power terminals for secure electrical connections.

Applications

• IGBT Inverters
• Industrial Drives
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific B2 suffix against official Infineon documentation to confirm material or processing variations. Ensure compatibility with M5 terminal mounting torque specifications ranging from 2.5 to 5.0 Nm. Cross-reference thermal resistance values with the intended heatsink interface material properties.

Selection Notes

Select this module for high-power inverter designs requiring robust short-circuit withstand capability up to 1200 A. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Confirm that the gate drive circuit supports the recommended ±15 V operating voltage for optimal switching characteristics.

Part Context

This component belongs to the 62mm C-series module family from Infineon Technologies. It represents the fourth generation of Trench/Fieldstop IGBT technology, designed to balance low conduction losses with fast switching speeds. The series is engineered for demanding industrial power conversion environments.

Replacement Considerations

FF300R12KE4