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The FF300R12KE4HOSA1 is a 62mm C-series IGBT module featuring Trench/Fieldstop IGBT4 technology and an optimized Emitter Controlled Diode. It has a collector-emitter voltage of 1200 V, a continuous DC collector current of 300 A at 100°C case temperature (rising to 460 A at 25°C), and a repetitive peak collector current of 600 A. The total power dissipation is 1600 W at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.75 V (typical) at 25°C, a gate threshold voltage of 5.8 V (typical), and an internal gate resistance of 2.5 Ω. Thermal resistance from junction to case is 0.093 K/W for the IGBT and 0.15 K/W for the diode.
Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm RoHS compliance status and manufacturing origin details. Ensure that the procurement channel provides valid traceability certificates matching the component's production batch requirements.
Select this module for applications requiring robust short-circuit withstand capability up to 1200 A for 10 µs. Consider the 20 nH stray inductance for circuit layout optimization. Verify that the mounting torque adheres to the specified 3.0 - 6.0 Nm range for M6 screws to ensure proper thermal contact and mechanical integrity.
This component belongs to the Infineon 62mm C-series family, utilizing the IGBT4 generation. It shares the standard physical footprint and terminal configuration with other modules in this series, facilitating direct mechanical integration into existing industrial power conversion platforms designed for 62mm form factors.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Infineon replacement guides or distributor compatibility matrices.