FF3MR12KM1PHOSA1

FET, MOSFET Arrays Overview

The FF3MR12KM1PHOSA1 is a CoolSiC MOSFET half-bridge module from Infineon Technologies, utilizing silicon carbide technology. It features a 1.2 kV drain-source breakdown voltage and a continuous drain current of 500 A. The on-resistance is 2.13 mOhms. Gate-source voltage limits are -10 V to +20 V, with a threshold voltage of 3.45 V. Operating temperature ranges from -40°C to +150°C. Forward voltage is 4.6 V. Rise time is 82.2 ns, fall time is 53 ns. Typical turn-on delay is 83.4 ns, and turn-off delay is 22 ns. Dimensions are 106.4 mm length, 61.4 mm width, and 30.5 mm height.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide (SiC) technology for high-performance power conversion.
• Configured as a half-bridge module within the CoolSiC product family.
• Designed for screw mount installation in industrial applications.

FET, MOSFET Arrays Applications

• Industrial power supplies
• Uninterruptible Power Supplies (UPS)
• Energy Storage Systems (ESS)
• Solar inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix PHOSA1 against official Infineon documentation to confirm package type and tape/reel specifications. Ensure compatibility with existing thermal management systems given the 150°C maximum junction temperature rating. Cross-reference the datasheet version to validate electrical parameters such as on-resistance and switching times before integration into design schematics.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high efficiency at 1.2 kV blocking voltage. The 500 A continuous current capability supports medium-to-high power density designs. Consider the 2.13 mOhms on-resistance for conduction loss calculations. Verify that the gate drive circuitry can accommodate the specified -10 V to +20 V range and that the thermal interface material matches the module's mounting requirements.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon CoolSiC MOSFET series, specifically the M1H generation for 1200 V modules. It is part of the 62 mm C-Series packaging family, designed for compact integration in modern power electronics. The module utilizes press-fit contact technology for reliable interconnection.

FET, MOSFET Arrays Replacement Considerations

FF3MR12KM1HHPSA1 offers similar 1.2 kV ratings but differs in current capacity (190 A) and on-resistance (4.44 mOhms). FF3MR12KM1HPHPSA1 is another variant within the same series. Direct substitution requires verification of current handling and thermal performance differences.