FF3MR20KM1HHPSA1

Overview

The FF3MR20KM1HHPSA1 is a CoolSiC Trench MOSFET half-bridge module from Infineon's 62 mm C-Series. It features a 2000 V drain-source voltage and supports a continuous DC drain current of 375 A at 25 °C case temperature, with a repetitive peak current of 800 A. The on-state resistance is typically 4 mΩ at 25 °C. Operating junction temperatures range from -40 °C to 175 °C. The module utilizes screw mounting with an internal isolation class 1 Al2O3 layer and provides 4 kV AC insulation for one minute.

Feature Summary

• Utilizes CoolSiC Trench MOSFET technology for high current density and low switching losses
• Provides 4 kV AC insulation with basic insulation (class 1) using Al2O3 material
• Designed for industrial applications validated against IEC 60747, 60749, and 60068 standards

Applications

• UPS systems
• DC/DC converters
• High-frequency switching applications
• Solar applications

Procurement Notes

Verify the specific ordering suffix HPSA1 against official documentation to confirm mechanical and electrical specifications match the design requirements. Ensure compliance with the manufacturer's application notes regarding gate voltage selection and thermal management for long-term reliability.

Selection Notes

Select this component for designs requiring high-voltage silicon carbide performance in a standardized 62 mm form factor. Consider the thermal resistance values and recommended gate voltages (-3 V off, 18 V on) when designing the driver circuitry to optimize switching losses and ensure safe operation within the specified temperature limits.

Part Context

This part belongs to the 62 mm C-Series family of power modules. It shares the standard mechanical footprint with other variants in the series, facilitating modular design strategies. The 'H' designation indicates specific terminal configurations compatible with standard heatsinking solutions for this package size.

Replacement Considerations

Direct replacements must maintain the 2000 V rating and 62 mm C-Series mechanical dimensions. Verify that alternative SiC half-bridge modules offer comparable RDS(on) and switching energy characteristics to ensure system efficiency remains unchanged.