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The FF400R12KE3B2HOSA1 is a 62mm C-series IGBT module featuring Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency Diode. It provides a collector-emitter voltage of 1200 V, with continuous DC collector currents rated at 400 A (TC=80°C) and 580 A (TC=25°C). The module supports a repetitive peak current of 800 A and dissipates up to 2000 W. Key electrical parameters include a saturation voltage of 1.7 V at 25°C, gate threshold voltage of 5.0 V typical, and internal gate resistance of 1.9 Ω. Thermal resistance from junction to case is 0.062 K/W for the IGBT and 0.11 K/W for the diode.
Verify the complete part number including the HOSA1 suffix against official Infineon documentation to ensure correct configuration. Confirm RoHS compliance status and check for any specific application notes regarding thermal interface material requirements before finalizing orders.
Evaluate the thermal resistance values and maximum operating temperature range when designing the cooling system. Ensure the gate drive circuitry matches the specified gate charge and internal resistance characteristics to achieve optimal switching speeds and minimize power losses.
This component belongs to the Infineon 62mm C-series module family, which utilizes robust copper baseplate construction. It represents the IGBT3 generation technology, designed to balance high efficiency with reliable operation in demanding industrial environments.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon resources for cross-referencing alternatives.