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The FF400R17KE4EHOSA1 is a 62mm C-Series IGBT module utilizing Trench/Fieldstop IGBT4 and Emitter Controlled 3 Diode technology. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 400 A at TC = 95°C, with a repetitive peak collector current (ICRM) of 800 A. The typical collector-emitter saturation voltage (VCEsat) is 1.95 V at Tvj = 25°C. The integrated diode has a forward voltage (VF) of 1.80 V at Tvj = 25°C. Thermal resistance from junction to case is 0.0632 K/W for the IGBT and 0.106 K/W for the diode. The module supports an operating temperature range of -40°C to 150°C.
Verify the specific ordering suffix EHOSA1 against official Infineon documentation to confirm compliance with RoHS directives and material content requirements. Ensure that the procurement channel provides valid traceability data matching the module serial number and date code printed on the component label.
Evaluate the thermal resistance values and stray inductance specifications to ensure compatibility with the target circuit's cooling infrastructure and switching frequency requirements. Confirm that the gate drive voltage limits and recommended external gate resistors align with the system's control logic and desired switching speed characteristics.
This component belongs to the 62mm C-Series family of IGBT modules manufactured by Infineon Technologies. It utilizes the fourth generation of trench field-stop IGBT technology combined with emitter controlled diodes to deliver high efficiency and reliability in industrial power electronics applications.
Consult official Infineon cross-reference documentation to identify verified substitute part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without verifying pinout compatibility and thermal characteristics.