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Product Detailed Parameters
- Description：IGBT MODULE 1700V 400A
- Series：C
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 400A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：400 A
- Power - Max：-
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：36 nF @ 25 V
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Overview
The FF400R17KE4HOSA1 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled 3 diode. It has a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 400 A at TC = 95°C. The repetitive peak collector current (ICRM) is 800 A. Typical saturation voltage (VCEsat) is 1.95 V at Tvj = 25°C, rising to 2.30 V at Tvj = 150°C. Gate threshold voltage (VGEth) is typically 5.80 V. Turn-on energy loss (Eon) is 89 mJ at Tvj = 25°C, while turn-off energy loss (Eoff) is 73 mJ. Diode forward voltage (VF) is typically 1.80 V at 25°C. Thermal resistance from junction to case is 0.0632 K/W for the IGBT and 0.106 K/W for the diode.
Feature Summary
- Trench/Fieldstop IGBT4 technology with emitter controlled 3 diode
- Extended operating temperature range up to 150°C
- Low VCEsat with positive temperature coefficient
- High robustness against short-circuit conditions
Applications
- High power converters
- Motor drives
- UPS systems
- Wind turbines
Procurement Notes
Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm RoHS compliance and material content declarations. Ensure that the component matches the exact datasheet revision referenced during design validation. Cross-check terminal torque specifications and mounting requirements before integration into the final assembly process.
Selection Notes
Select this module for applications requiring high voltage blocking capability and robust switching performance. Consider the thermal resistance values when designing the heatsink interface. Evaluate the gate charge and internal gate resistor for driver compatibility. Verify that the stray inductance meets the circuit layout constraints to minimize switching losses and voltage spikes.
Part Context
This component belongs to the Infineon 62mm C-Series family, utilizing Trenchstop IGBT4 technology. It is designed as a half-bridge configuration within a standard housing. The series emphasizes low conduction losses and high reliability for industrial power electronics applications.
Replacement Considerations
FF400R17KE4
FAQ
What is the maximum short-circuit withstand time?
The module can withstand a short-circuit condition for a maximum duration of 10 µs.
What is the isolation test voltage?
The isolation test voltage is 4.0 kV RMS for 1 minute at 50 Hz.
What is the typical gate-emitter leakage current?
The typical gate-emitter leakage current is 400 nA at Tvj = 25°C with VGE = 20 V.
