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The FF450R12IE4BOSA2 is a half-bridge IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It features a PrimePACK™2 housing with an integrated NTC thermistor. The collector-emitter voltage (VCES) is rated at 1200 V, with a continuous DC collector current (IC nom) of 450 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 900 A for 1 ms pulses. Total power dissipation (Ptot) is 2.55 kW at TC = 25°C. The operating junction temperature range spans from -40°C to 150°C.
Verify the specific BOSA2 suffix against official Infineon documentation to confirm material content and compliance status. Ensure that the ordering code matches the exact revision required for your design. Cross-reference the datasheet version number during procurement to guarantee alignment with the latest electrical characteristics and mechanical dimensions provided by the manufacturer.
Select this module for applications requiring high robustness and extended temperature operation. Verify that the gate drive circuitry supports the specified internal gate resistance values. Confirm that the cooling system can maintain the case temperature within limits to sustain the 450 A continuous current rating. Check that the mounting torque adheres strictly to the application notes to ensure reliable thermal contact and mechanical stability.
This component belongs to the Infineon IGBT4 series, specifically designed for industrial power conversion. It utilizes Trench/Fieldstop technology to optimize switching performance. The PrimePACK™2 package provides high power density and efficient thermal management. The integration of an NTC thermistor allows for precise junction temperature monitoring within the power electronics assembly.
Consult official Infineon cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on voltage and current ratings. Verify pinout compatibility and thermal resistance specifications before implementation.