FF450R12KT4HOSA1

Overview

The FF450R12KT4HOSA1 is a half-bridge IGBT module from Infineon's 62mm C-Series, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 450 A at TC=100°C, or 580 A at TC=25°C. The repetitive peak collector current (ICRM) is 900 A. Total power dissipation (Ptot) reaches 2400 W at TC=25°C. The module includes an emitter-controlled HE diode with a forward voltage (VF) of 1.75 V at Tvj=125°C. Operating junction temperature ranges from -40°C to 150°C.

Feature Summary

• Incorporates fast Trench/Fieldstop IGBT4 technology for low switching losses and high robustness.
• Features an isolated base plate with high creepage and clearance distances for enhanced safety.
• Provides positive temperature coefficient for VCEsat to ensure safe parallel operation.

Applications

• High power converters
• Motor drives
• UPS systems
• Wind turbines

Procurement Notes

Verify the specific ordering suffix HOSA1 against official documentation to confirm compliance details. Ensure that the procurement channel provides valid traceability data. Cross-reference the manufacturer part number with authorized distributors to prevent counterfeit components. Confirm RoHS status and material content sheets prior to finalizing orders.

Selection Notes

Select this component for applications requiring high power density in a standard 62 mm housing. Evaluate thermal resistance values carefully to determine heatsink requirements. Consider the stray inductance of 20 nH when designing gate drive circuits. Verify that the operating voltage does not exceed the 1200 V rating under transient conditions.

Part Context

This module belongs to the 62mm C-Series family designed for industrial power electronics. It utilizes silicon technology within a screw-mount package. The product line emphasizes high reliability and extended operational temperature capabilities for demanding environments.

Replacement Considerations

FF450R12KT4PHOSA1