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The FF450R17IE4BOSA2 is a PrimePACK™ 2 IGBT module with a collector-emitter voltage of 1700 V and a nominal continuous DC collector current of 450 A. It features a maximum repetitive peak collector current of 900 A and a total power dissipation of 2800 W at 25°C case temperature. The saturation voltage ranges from 2.00 V to 2.80 V depending on junction temperature, while the diode forward voltage spans 1.85 V to 2.35 V. Thermal resistance from junction to case is 54 K/kW for the IGBT and 100 K/kW for the diode. The module includes an NTC thermistor rated at 5 kΩ at 25°C.
Verify the specific ordering suffix BOSA2 against official Infineon documentation to confirm exact manufacturing details. Confirm RoHS compliance status and check for any active or preferred designations before procurement. Ensure compatibility with standard mounting procedures and verify that the component meets all required electrical ratings for the intended circuit design.
Select this module for high-power industrial applications requiring 1700 V blocking capability and up to 450 A continuous current. Consider the low switching losses and extended operation temperature range when designing thermal management systems. Verify that the gate drive requirements align with the specified internal gate resistor and threshold voltages for optimal performance.
This component belongs to the Trenchstop IGBT4 - E4 series manufactured by Infineon Technologies. It utilizes silicon technology and is housed in the PrimePACK™ 2 package. The module is designed for industrial applications and features a copper base plate. It represents a standard housing configuration optimized for high power density and thermal cycling capability.
Consult official Infineon documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other packages or voltage classes without verifying electrical parameters and mechanical dimensions.