FF450R17ME4BOSA1

$155.19

Description：IGBT MOD 1700V 600A 2500W
Series：EconoDUAL™ 3

SKU:55e156eb287f Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1700V 600A 2500W
Series：EconoDUAL™ 3
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：2 Independent
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 450A
Input：Standard
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：600 A
Power - Max：2500 W
Current - Collector Cutoff (Max)：3 mA
Input Capacitance (Cies) @ Vce：36 nF @ 25 V

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FF450R17ME4BOSA1

Overview

The FF450R17ME4BOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 3 diode. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 450 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 900 A for 1 ms pulses. At Tvj = 25°C, the collector-emitter saturation voltage (VCEsat) is typically 1.95 V. Total power dissipation (Ptot) is rated at 2500 W at TC = 25°C. The operating junction temperature range spans from -40°C to +150°C.

Feature Summary

Integrates Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode technologies within a single EconoDUAL™3 housing.
Features an isolated copper baseplate with standard screw-mount terminals for mechanical stability.
Includes an integrated NTC thermistor for precise thermal monitoring during operation.
Provides low VCEsat characteristics with a positive temperature coefficient for reliable parallel operation.

Applications

Motor drives
Servo drives
UPS systems
Wind turbines

Procurement Notes

Verify the specific ordering suffix BOSA1 against official documentation to confirm exact manufacturing specifications and compliance status. Ensure that the component matches the required technical parameters for your application before procurement. Cross-reference the datasheet revision date to ensure access to the most current electrical and mechanical data.

Selection Notes

Select this module for high-power inverter applications requiring robust short-circuit withstand capability and high switching frequencies. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within the specified operational limits. Evaluate gate resistor requirements to optimize switching losses and electromagnetic interference performance.

Part Context

This component belongs to the Infineon EconoDUAL™3 series, designed for industrial power conversion. It utilizes silicon-based IGBT4 technology to deliver high power density in a standardized housing format. The module integrates both the IGBT switch and the anti-parallel diode, simplifying circuit design for half-bridge configurations.