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The FF450R33T3E3B5BPSA1 is a high-voltage IGBT module from Infineon's XHP™3 family, utilizing Trench/Fieldstop IGBT3 technology. It features a dual configuration with a collector-emitter voltage of 3300 V and a continuous DC collector current of 450 A at a case temperature of 100 °C. The module incorporates an AlSiC base plate for enhanced thermal cycling capability and provides isolated insulation rated at 10.4 kV AC for 60 seconds. Designed for industrial applications, it supports operation up to a junction temperature of 150 °C.
Verify the specific ordering suffix against the official datasheet to confirm mechanical and electrical specifications. Ensure compliance with export regulations if shipping from restricted regions. Confirm that the component meets the required industrial qualification standards before integration into the final design.
Select this module for medium-power applications requiring high voltage isolation and robust thermal performance. Evaluate the thermal resistance values to ensure adequate heat sinking. Verify gate drive requirements match the specified internal gate resistor and peak voltage limits for reliable switching operations.
This component belongs to the XHP™3 product line, which integrates Trench/Fieldstop IGBT3 technology. The series is engineered for high power density and superior power cycling capability in demanding industrial environments.
Consult the official Infineon replacement guide for verified substitute part numbers. Do not assume cross-compatibility with other voltage classes or package types without explicit manufacturer confirmation.
The maximum repetitive peak collector current (ICRM) is 900 A, limited by the operating junction temperature.
The partial discharge extinction voltage is typically 5.1 kV RMS at 50 Hz with a partial discharge quantity of 10 pC.
The recommended mounting torque for the M8 screws is between 8 Nm and 10 Nm.