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The FF450R33T3E3BPSA1 is a dual IGBT module from Infineon's XHP™3 series, utilizing Trench/Fieldstop IGBT3 and emitter controlled diode 3 technologies. It features a collector-emitter voltage (VCES) of 3300 V and a continuous DC collector current (ICDC) of 450 A at a case temperature of 100°C. The module operates with a junction temperature range of -40°C to +150°C and includes an AlSiC base plate for enhanced thermal cycling capability.
Verify the specific ordering suffix BPSA1 against the official datasheet to confirm exact packaging and labeling specifications. Ensure compliance with export documentation requirements if sourcing from restricted regions. Confirm that the component meets industrial qualification standards per IEC 60747, 60749, and 60068 before integration into final designs.
Select this module for applications requiring high power density and medium-voltage operation up to 3300 V. Consider the positive temperature coefficient of VCE,sat for reliable parallel operation without active current sharing circuits. Evaluate the thermal resistance values provided in the datasheet to design appropriate heat sinking solutions for the target operating environment.
This component belongs to Infineon's XHP™3 product family, designed for industrial and traction applications. It represents an evolution in IGBT technology, combining high breakdown voltage capabilities with improved switching performance and thermal stability compared to previous generations.
Direct replacements within the same voltage and current class include other XHP3 modules such as FF450R33ME3 or FF450R33KE3 variants. Verify pin compatibility and thermal characteristics when substituting.