FF600R12IP4PBPSA1

Overview

The FF600R12IP4PBPSA1 is a PrimePACK™2 IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It includes pre-applied thermal interface material. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, continuous DC collector current (ICDC) of 600 A at TH=100°C, and repetitive peak collector current (ICRM) of 1200 A. The collector-emitter saturation voltage (VCEsat) is typically 1.70 V at Tvj=25°C. Thermal resistance from junction to heatsink is 65.9 K/kW for the IGBT and 104 K/kW for the diode. The module operates within a junction temperature range of -40°C to 150°C.

Feature Summary

• High short-circuit capability and surge current robustness
• Integrated NTC temperature sensor for thermal monitoring
• Pre-applied thermal interface material for simplified assembly
• High insulation strength with 4 kV AC isolation

Applications

• 3-level applications
• Motor drives
• Wind turbines

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact configuration details. Ensure compliance with RoHS standards as indicated in the datasheet. Confirm that the pre-applied thermal interface material requirements are met during storage and transport according to application notes.

Selection Notes

Select this module for high-power industrial applications requiring robust short-circuit handling. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Verify mechanical mounting torque specifications for M5 and M4/M8 screws to ensure proper installation and thermal contact.

Part Context

This component belongs to Infineon's PrimePACK™2 series utilizing Trenchstop IGBT4 technology. It is designed for high current density and efficiency in power conversion systems. The module integrates both the IGBT switch and the anti-parallel diode in a single compact package.

Replacement Considerations

FF600R12IP4P