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The FF600R12IP4VBOSA1 is a PrimePACK™2 IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode. It provides a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 600 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 1200 A for 1 ms pulses. Total power dissipation (Ptot) is rated at 3.35 kW at TC = 25°C. The module includes an integrated NTC thermistor with a nominal resistance (R25) of 5.00 kΩ at 25°C. Operating junction temperature (Tvj op) ranges from -40°C to 150°C.
Verify the specific BOSA1 suffix against official Infineon documentation to confirm exact marking or packaging variations. Confirm RoHS compliance status through the manufacturer's latest product data sheet. Ensure that the component matches the intended application requirements regarding thermal management and electrical ratings before procurement.
Select this module for applications requiring robust short-circuit withstand capability and extended operation temperatures up to 150°C. Consider the low VCEsat characteristics for efficiency optimization in power conversion systems. Verify that the PrimePACK™2 form factor aligns with the mechanical constraints and cooling solutions available in the target design environment.
This component belongs to the Infineon Trenchstop IGBT4 series, utilizing field-stop technology for improved switching performance. The PrimePACK™2 housing is designed for high power density and reliable thermal cycling. The module integrates both IGBT and diode chips on a single substrate to facilitate half-bridge configurations in industrial power electronics.
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains equivalent VCES, IC nom, and package dimensions. Verify compatibility with existing gate drive circuits and thermal interface materials.