FF600R12KE4BOSA1

$145.37

Description：IGBT MODULE 1200V 600A
Series：C

SKU:b4859b368eb5 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1200V 600A
Series：C
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Half Bridge
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 600A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：600 A
Power - Max：-
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：38 nF @ 25 V

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FF600R12KE4BOSA1

Overview

The FF600R12KE4BOSA1 is a dual common emitter IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 600 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 1200 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 1.75 V. The operating junction temperature range spans from -40°C to +150°C. Key electrical parameters include a gate threshold voltage (VGEth) of 5.80 V typically, an internal gate resistance (RGint) of 1.3 Ω, and input capacitance (Cies) of 38.0 nF.

Feature Summary

Extended operating junction temperature capability up to 150°C
Low switching losses combined with low VCEsat
High robustness against short-circuit conditions
Positive temperature coefficient of VCEsat

Applications

High power converters
Motor drives
UPS systems
Wind turbines

Procurement Notes

Verify the exact ordering suffix BOSA1 against official Infineon documentation to confirm specific packaging or testing variations. Ensure compatibility with standard mounting torque specifications of 3.00 to 6.00 Nm for M6 screws. Confirm isolation requirements match the 4 kV AC 1 min insulation rating provided in the datasheet.

Selection Notes

Select this module for applications requiring high current density and robust short-circuit withstand capability. Consider the thermal resistance values (RthJC) when designing heatsink solutions. Verify that the gate drive circuitry supports the specified VGE limits and internal gate resistance characteristics for optimal switching performance.

Part Context

This component belongs to the 62mm C-Series module family from Infineon. It integrates fourth-generation trench field-stop IGBTs with emitter-controlled diodes. The series is designed for industrial applications demanding high power density and reliable operation under extreme electrical and thermal stress conditions.