FF600R12KE4EBOSA1

Overview

The FF600R12KE4EBOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 600 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 1200 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 1.75 V. The operating junction temperature range spans from -40°C to +150°C. The module weighs 340 g and includes an isolated base plate with high creepage and clearance distances.

Feature Summary

• Extended operating junction temperature capability up to 150°C
• Low switching losses combined with low VCEsat
• Unbeatable robustness with positive temperature coefficient for VCEsat
• High power density design featuring an isolated base plate

Applications

• High power converters
• Motor drives
• UPS systems
• Wind turbines

Procurement Notes

Verify the exact ordering suffix EBOSA1 against official Infineon documentation to confirm specific packaging or testing variations. Confirm UL approval status (E83335) and RoHS compliance requirements directly with the manufacturer before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high current handling and robust short-circuit withstand capability. Ensure thermal management solutions account for the specified RthJC values. Verify that gate drive voltages remain within the +/-20 V limit to maintain device integrity during operation.

Part Context

This module belongs to the 62mm C-Series lineup from Infineon. It integrates fourth-generation trench field-stop IGBTs with emitter-controlled diodes. The series is designed for industrial applications demanding high reliability and efficient power conversion in compact form factors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.