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Product Detailed Parameters
- Description：MEDIUM POWER 62MM
- Series：C
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 600A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-62MMHB
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：600 A
- Power - Max：-
- Current - Collector Cutoff (Max)：100 µA
- Input Capacitance (Cies) @ Vce：92.3 nF @ 25 V
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Overview
The FF600R12KE7BPSA1 is a dual IGBT module from Infineon's 62 mm C-Series, utilizing TRENCHSTOP™ IGBT7 technology. It features an emitter-controlled diode and supports a collector-emitter voltage of 1200 V with a nominal continuous DC collector current of 600 A at 90 °C case temperature. The maximum repetitive peak collector current reaches 1200 A. Electrical characteristics include a typical saturation voltage of 1.50 V at 25 °C and a gate threshold voltage between 5.15 V and 6.45 V. The module provides high power density with an isolated copper base plate and offers insulation test voltages up to 4 kV AC.
Feature Summary
- Incorporates TRENCHSTOP™ IGBT7 technology for optimized switching performance and positive temperature coefficient.
- Features an integrated emitter-controlled diode to minimize reverse recovery losses.
- Provides high mechanical robustness with an isolated base plate and superior creepage distances.
- Designed for industrial applications with qualified insulation coordination.
Applications
- Servo drives
- Solar applications
- UPS systems
- Motor drives
- High-power converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm terminal configuration and packaging details. Ensure compliance with RoHS directives and check for any design-not-recommended status updates. Confirm thermal interface material requirements and mounting torque specifications prior to assembly to maintain electrical isolation integrity.
Selection Notes
Select this component for designs requiring high current density in a compact 62 mm footprint. Evaluate thermal resistance values relative to the intended heatsink solution to ensure junction temperatures remain within the 175 °C operational limit. Consider the positive temperature coefficient for reliable parallel operation in higher power configurations.
Part Context
This module belongs to Infineon's 62 mm C-Series, which integrates advanced silicon technologies into standardized form factors. The series targets medium to high-power industrial applications, offering improved efficiency compared to previous generations through optimized chip architecture and package design.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided datasheet. Verify compatibility with alternative modules by comparing pinout dimensions, thermal resistance, and electrical ratings such as VCES and ICDC.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current (ICRM) is 1200 A, limited by the operating junction temperature.
Does the module have a positive temperature coefficient?
Yes, the TRENCHSTOP™ IGBT7 technology features a positive temperature coefficient for the collector-emitter saturation voltage.
What is the insulation test voltage rating?
The module supports an isolation test voltage (VISOL) of 4.0 kV RMS for 1 minute at 50 Hz.
