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Product Detailed Parameters
- Description：62MM POWER MODULE 1200 V WITH IG
- Series：C
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 600A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-62MM
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：600 A
- Power - Max：-
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：38 nF @ 25 V
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Overview
The FF600R12KT4HOSA1 is a half-bridge IGBT module from Infineon's 62 mm C-Series, utilizing Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It features a collector-emitter voltage (V_CES) of 1200 V and a nominal continuous DC collector current (I_CDC) of 600 A at a case temperature of 100 °C. The module supports a repetitive peak collector current of 1200 A. Key electrical parameters include a typical V_CE(sat) of 1.75 V at 25 °C and a forward voltage (V_F) of 1.85 V for the diode. Thermal resistance from junction to case is 0.046 K/W for the IGBT and 0.0929 K/W for the diode.
Feature Summary
- Incorporates Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology for low switching losses and high robustness.
- Features an isolated base plate with 4 kV AC insulation and a comparative tracking index exceeding 400.
- Provides extended operating temperature capabilities up to 150 °C under switching conditions.
Applications
- High power converters
- Motor drives
- UPS systems
- Wind turbines
Procurement Notes
Verify the specific ordering suffix HOSA1 against official documentation to confirm exact configuration details. Confirm industrial qualification status per IEC standards before integration. Ensure compliance with RoHS requirements and check for automotive qualification exclusions. Validate thermal interface material specifications during assembly to maintain rated performance.
Selection Notes
Select this component for applications requiring high power density within the 62 mm form factor. Consider the positive temperature coefficient of V_CE(sat) for parallel operation stability. Evaluate the stray inductance of 20 nH for circuit layout optimization. Verify that the mounting torque adheres to the specified 3 to 6 Nm range for reliable mechanical connection.
Part Context
This module belongs to the 62 mm C-Series family, designed for industrial applications. It utilizes silicon technology and is housed in a standard housing with screw mounting terminals. The product is qualified according to relevant tests of IEC 60747, 60749, and 60068 standards.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided datasheet or verified local source material.
FAQ
Is the FF600R12KT4HOSA1 qualified for automotive applications?
No, the product is explicitly stated as not being qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current (ICRM) is 1200 A for a pulse duration of 1 ms.
What is the internal gate resistor value?
The internal gate resistor (RGint) is typically 1.3 Ω at a junction temperature of 25 °C.
