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The FF600R12ME4B72BOSA1 is a dual IGBT module from Infineon's EconoDUAL™3 family, utilizing Trench/Fieldstop IGBT4 technology. It features an integrated emitter-controlled diode and an NTC thermistor. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, a nominal continuous DC collector current (ICDC) of 600 A at 100°C case temperature, and a repetitive peak collector current (ICRM) of 1200 A. The saturation voltage (VCE,sat) is typically 1.75 V at 25°C. The module supports a maximum operating junction temperature (Tvj op) of 150°C and includes an isolated copper base plate for thermal management.
Verify the specific ordering suffix B72BOSA1 against official documentation to confirm terminal connection type and packaging details. Confirm that the component meets all relevant safety and environmental compliance requirements for the intended deployment environment before integration.
Select this module for medium-power applications requiring high current handling and reliable switching performance. Ensure the cooling system design accommodates the thermal resistance values specified in the datasheet. Verify gate driver compatibility and mounting torque specifications to maintain insulation integrity and thermal contact.
This component belongs to the Infineon EconoDUAL™3 product family, designed for medium-power applications ranging from 100 A to 900 A. It utilizes TRENCHSTOP™ IGBT4 technology to achieve high power density and leading-edge power cycling capability within a standardized 62 mm package format.
Consult official Infineon documentation for confirmed substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional equivalence in existing designs.
The maximum operating junction temperature (Tvj op) is 150°C.
Yes, it includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C.
The isolation test voltage (VISOL) is 3.4 kV RMS for 1 minute at 50 Hz.