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Product Detailed Parameters
- Description：IGBT MODULE 1700V 4150W
- Series：PrimePACK™2
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 650A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：-
- Power - Max：4150 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：54 nF @ 25 V
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Overview
The FF650R17IE4BOSA1 is a dual IGBT silicon module from Infineon Technologies, belonging to the Trenchstop IGBT4 - E4 series. It features a PrimePACK 2 package with screw mount installation. The device supports a collector-emitter maximum voltage (VCEO) of 1.7 kV and delivers a continuous collector current of 930 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2 V, a gate-emitter leakage current of 400 nA, and a maximum power dissipation (Pd) of 4.15 kW. The unit operates within a temperature range of -40°C to +150°C, with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Dual configuration utilizing Trenchstop IGBT4 technology for optimized switching performance.
- PrimePACK 2 housing designed for robust mechanical stability and efficient thermal management in high-power applications.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm compliance requirements and packaging details. Ensure that the procurement channel provides valid traceability data. Cross-reference the manufacturer part number FF650R17IE4BOSA1 with authorized distributors to confirm authenticity and avoid counterfeit components during acquisition.
Selection Notes
Select this component for designs requiring high current capacity and robust insulation in a compact form factor. The 1.7 kV rating suits medium-voltage industrial applications. Evaluate thermal resistance characteristics against the system's cooling infrastructure. Confirm that the drive circuitry accommodates the specified gate-emitter voltage limits and switching speeds inherent to the IGBT4 generation.
Part Context
This module is part of the broader FF650R17 family, sharing core electrical specifications with variants such as FF650R17IE4. The BOSA1 suffix typically denotes specific environmental or packaging configurations defined by the manufacturer. It serves as a direct replacement for earlier iterations within the same current and voltage class, maintaining compatibility with existing PrimePACK 2 footprints.
Replacement Considerations
FF650R17IE4 is a confirmed substitute part number listed in distributor databases for this component.
FAQ
What is the maximum junction temperature for this module?
The maximum operating temperature is specified as +150°C.
Does this module include an integrated NTC thermistor?
Yes, official product attributes indicate the inclusion of an NTC thermistor for thermal monitoring.
What is the typical collector-emitter saturation voltage?
The collector-emitter saturation voltage is 2 V.
