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The FF650R17IE4VBOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4-E4 technology. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 650 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 1300 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 2.00 V, while the diode forward voltage (VF) is 1.85 V. Total power dissipation is rated at 4.15 kW. The module operates within a junction temperature range of -40°C to 150°C and includes an integrated NTC thermistor with a rated resistance of 5.00 kΩ at 25°C.
Verify the specific BOSA1 suffix against official documentation to confirm material content or compliance variations. Confirm RoHS status and REACH SVHC details through authorized channels. Ensure the ordering code matches the exact technical requirements before finalizing procurement.
Select this module for high-current applications requiring robust thermal cycling capability. Verify that the gate drive circuitry supports the specified VGE thresholds and internal gate resistance. Ensure heatsinking meets the RthCH requirements to maintain junction temperatures within the 150°C operational limit under expected load conditions.
This component belongs to the PrimePACK™ 2 series, designed for industrial and automotive traction applications. It represents the IGBT4-E4 generation, offering improved efficiency over previous technologies. The package provides high creepage and clearance distances suitable for demanding electrical isolation environments.
Direct replacements must match the 1700 V / 650 A rating and PrimePACK™ 2 footprint. Consider modules with similar VCEsat and switching energy values to maintain system efficiency. Verify pinout compatibility and thermal interface specifications before substitution.