FF6MR12W2M1HB11BPSA1

$131.89

Description：MOSFET 2N-CH 1200V 145A MODULE
Series：CoolSiC™

SKU:0643e3bc547a Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF6MR12W2M1HB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 145A MODULE. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF6MR12W2M1HB11BPSA1

Description：MOSFET 2N-CH 1200V 145A MODULE
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：145A (Tj)
Rds On (Max) @ Id, Vgs：5.4mOhm @ 150A, 18V
Vgs(th) (Max) @ Id：5.15V @ 60mA
Gate Charge (Qg) (Max) @ Vgs：446nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：13200pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF6MR12W2M1HB11BPSA1

FF6MR12W2M1HB11BPSA1

FET, MOSFET Arrays Overview

The FF6MR12W2M1HB11BPSA1 is a CoolSiC™ Trench MOSFET half-bridge module in the EasyDUAL package. It features a 1200 V drain-source voltage and a continuous drain current of 150 A at 25 °C, with a repetitive peak current rating of 300 A. The on-state resistance is typically 8 mΩ at 25 °C. Operating junction temperatures range from -40 °C to +175 °C. The module utilizes PressFIT contact technology and includes an integrated NTC temperature sensor for thermal monitoring.

FET, MOSFET Arrays Feature Summary

Utilizes CoolSiC™ Trench MOSFET technology for low switching losses and high current density
Features rugged mounting via integrated clamps and PressFIT contact technology
Includes an integrated NTC thermistor for precise temperature sensing
Designed with low stray inductance for high-frequency switching applications

FET, MOSFET Arrays Applications

Uninterruptible Power Supply (UPS) systems
High-frequency switching applications
DC/DC converters
Solar power applications

FET, MOSFET Arrays Procurement Notes

Verify that the specific ordering suffix matches the required configuration, as variations exist within the M1H series. Confirm compatibility with recommended Infineon gate drivers before integration. Ensure the application environment adheres to industrial qualification standards defined by IEC 60747, 60749, and 60068. Check datasheet guidelines for optimal gate voltage selection to balance performance and longevity.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high efficiency and compact form factors in power conversion systems. The 1200 V rating supports standard DC bus voltages in solar and UPS applications. Consider the thermal resistance and operating temperature limits when designing heat sinks. Verify that the system's switching frequency aligns with the module's low inductive design capabilities.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon CoolSiC™ M1H family, which employs advanced trench gate technology for improved reliability and lower losses compared to planar devices. The EasyDUAL packaging provides a standardized footprint for easy integration into existing power modules. The series is targeted at industrial applications demanding high power density and robust operation under varying thermal conditions.

FET, MOSFET Arrays Replacement Considerations

Direct replacements within the same EasyDUAL footprint include FF6MR12W2M1HPB11BPSA1 and FF6MR12W2M1H_B11. Verify electrical parameters such as RDS(on) and switching times, as they may differ slightly between variants. Ensure mechanical compatibility with the mounting clamps and PressFIT pins.