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Product Detailed Parameters
- Description：IGBT MODULE 1700V 800A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 800A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：A-IHV130-3
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：1200 A
- Power - Max：5200 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：72 nF @ 25 V
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Overview
The FF800R17KE3B2NOSA1 is a chopper IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3-E3 technology. It features an IHM housing with dimensions of 130 mm by 140 mm and weighs 1050 g. The collector-emitter voltage (VCES) is rated at 1700 V, while the continuous DC collector current (IC nom) reaches 800 A at TC = 80°C. The typical collector-emitter saturation voltage (VCE sat) is 2.00 V at Tvj = 25°C. The diode forward voltage (VF) is typically 1.55 V at Tvj = 25°C. Maximum junction temperature is 150°C, with an operating range of -40°C to 125°C.
Feature Summary
- Incorporates Trenchstop IGBT3-E3 technology for optimized switching performance.
- Features an enlarged diode configuration within the chopper topology.
- Utilizes an AlSiC baseplate material for enhanced thermal management.
- Includes internal isolation using Aluminum Nitride (AlN).
Applications
- Industrial traction systems
- Chopper circuits in power conversion
- High-power industrial drives
Procurement Notes
Verify the exact ordering suffix against official manufacturer documentation before procurement. Confirm that the specific revision matches your design requirements. Ensure compliance with RoHS directives as indicated in the datasheet. Cross-reference the part number with authorized distributors to avoid counterfeit components. Check for any recent product discontinuation notices or lifecycle status updates.
Selection Notes
Evaluate the thermal resistance values provided in the datasheet against your heatsink capabilities. Consider the gate resistor requirements for optimal switching speed and loss minimization. Verify the mechanical mounting torque specifications to ensure secure installation. Assess the stray inductance impact on your circuit layout. Confirm the insulation voltage ratings meet your system safety standards.
Part Context
This component belongs to the Infineon IGBT3-E3 family, designed for high-power applications. It shares the IHM housing form factor with other modules in this series. The technology focuses on improving efficiency and reliability in demanding environments. It is distinct from newer generations like IGBT4 or IGBT5.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult official Infineon resources for potential cross-references or next-generation replacements.
