SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF800R17KF6CB2NOSA2 is a discontinued IGBT module from Infineon Technologies, belonging to the IHM-A series. It features a chopper topology with dual collector and dual emitter configuration. The device supports a maximum collector-emitter voltage of 1700 V and a continuous collector current of 800 A at 25°C. Packaged in the IHM130 format for chassis mounting, it operates within a junction temperature range of -40°C to +125°C. The module utilizes Silicon technology and includes an integrated NTC thermistor for thermal monitoring.
This component is officially discontinued and no longer manufactured by Infineon. Sourcing is limited to existing market inventory or third-party distributors. Verify part authenticity and storage conditions carefully, as availability varies significantly. Confirm lead times with suppliers immediately, as stock levels are finite and subject to depletion without restocking.
Engineers should evaluate replacement options due to the discontinuation status. The FF800R17KP4B2NOSA2 is documented as a direct substitute. Compare thermal resistance, switching characteristics, and pin compatibility before integration. Ensure the alternative module meets all original design constraints regarding voltage ratings and current handling capabilities.
Part of the Infineon IHM-A series, this module targets heavy-duty industrial environments. It represents the Trenchstop IGBT3-E3 technology generation. The IHM130 package provides high power density and reliable thermal performance for demanding power conversion tasks in stationary and mobile applications.
FF800R17KP4B2NOSA2 is confirmed as a direct replacement.