FF8MR12W2M1B11BOMA1

FET, MOSFET Arrays Overview

The FF8MR12W2M1B11BOMA1 is a CoolSiC MOSFET module manufactured by Infineon Technologies. It features a dual N-channel configuration with a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 150 A at 25°C. The device exhibits an on-resistance of 7.5 mOhms and utilizes Press Fit installation in a Module package. Operating temperatures range from -40°C to +150°C, with typical turn-on and turn-off delays of 21.5 ns and 57 ns respectively.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide (SiC) technology for high-performance switching capabilities
• Incorporates EasyDUAL and PressFIT packaging for secure mechanical mounting
• Features dual N-channel configuration within a single discrete module

FET, MOSFET Arrays Applications

• Industrial power conversion systems
• Uninterruptible Power Supply (UPS) units
• Electric Vehicle (EV) charging infrastructure

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix BOMA1 against official Infineon documentation to confirm exact manufacturing lot details and compliance status. Confirm availability as the component may be subject to discontinuation notices. Ensure compatibility with existing PCB footprints and thermal management solutions before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high voltage handling and low conduction losses. The 1.2 kV rating suits medium-voltage industrial environments. Verify that the 150 A current capacity aligns with system peak loads. Consider the Press Fit mounting requirement when designing the mechanical assembly and ensuring proper contact pressure for reliable electrical connection.

FET, MOSFET Arrays Part Context

This component belongs to the Discrete IGBT4 series and utilizes CoolSiC technology. It is part of Infineon's portfolio of power modules designed for efficiency and reliability. The EasyDUAL form factor integrates multiple switches into a compact unit, simplifying circuit design for half-bridge or full-bridge topologies in power electronics.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes within the FF8MR12W2M1 family. Verify pinout and thermal characteristics match before replacing. Consult official cross-reference lists for approved alternatives.