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The FF900R12IP4DVBOSA1 is a PrimePACK™2 IGBT module utilizing Trench/Fieldstop IGBT4 technology with an enlarged Emitter Controlled 4 diode and integrated NTC thermistor. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 900 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 1800 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 1.70 V, while the diode forward voltage (VF) is 1.65 V. Total power dissipation is rated at 5.1 kW. The module provides 4 kV AC insulation for 1 minute and operates within a junction temperature range of -40°C to 150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure that the component matches the required electrical ratings and mechanical dimensions for the intended installation. Cross-reference the datasheet revision to validate all technical parameters before finalizing procurement orders.
Select this module for applications requiring high current density and robust short-circuit withstand capability. Consider the thermal resistance values when designing heatsink solutions to maintain junction temperatures within the specified operational limits. Verify gate drive requirements align with the internal gate resistor and charge specifications for optimal switching performance.
This component belongs to the Infineon Trenchstop IGBT4 series housed in the PrimePACK™2 package. It represents a high-power discrete IGBT solution designed for demanding industrial and traction environments. The module integrates advanced chip technology with a robust copper baseplate substrate to ensure efficient heat dissipation and reliable long-term operation under heavy load conditions.
Public confirmed substitute part numbers are not available in the provided source material.