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Product Detailed Parameters
- Description：MEDIUM POWER ECONO
- Series：EconoDUAL™3
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 900A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-ECONOD
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：900 A
- Power - Max：-
- Current - Collector Cutoff (Max)：100 µA
- Input Capacitance (Cies) @ Vce：122000 pF @ 25 V
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Overview
The Infineon FF900R12ME7BPSA1 is a half-bridge IGBT module utilizing TRENCHSTOP™ IGBT7 technology within the EconoDUAL™3 package. It features an isolated copper baseplate and PressFIT contact technology for mounting. The device supports a collector-emitter voltage of 1200 V with a continuous DC collector current of 900 A at a case temperature of 90 °C. Maximum repetitive peak collector current reaches 1800 A. The integrated NTC thermistor provides a rated resistance of 5 kΩ at 25 °C, enabling thermal monitoring.
Feature Summary
- TRENCHSTOP™ IGBT7 technology providing positive temperature coefficient for saturation voltage
- PressFIT contact technology ensuring high mechanical robustness
- Integrated NTC thermistor for reliable thermal management
- Isolated baseplate design with standard housing dimensions
Applications
- Motor drives
- Servo drives
- UPS systems
- Commercial agriculture vehicles
- High-power converters
Procurement Notes
Verify the specific suffix BPSA1 against official documentation to confirm terminal configuration and packaging details. Ensure compatibility with recommended gate drivers listed in the manufacturer's guide. Confirm that the application environment meets the industrial qualification standards defined by IEC 60747, 60749, and 60068 before deployment.
Selection Notes
Select this component for applications requiring high power density and robust mechanical connections via PressFIT pins. Evaluate thermal resistance values (RthJC) and maximum junction temperature limits (175 °C) against system cooling capabilities. Consider the stray inductance and switching characteristics when designing the gate drive circuitry and PCB layout for optimal performance.
Part Context
This module belongs to the EconoDUAL™3 family, designed for medium to high-power industrial applications. It represents the integration of advanced silicon IGBT technology with emitter-controlled diodes. The series focuses on maximizing power cycling capability and offering flexible integration options through standardized housing and contact technologies.
Replacement Considerations
Direct replacements include variants such as FF900R12ME7P_B11 or FF900R12ME7_B11. Verify pinout compatibility and electrical parameters before substitution. Cross-reference datasheets to ensure identical thermal and mechanical specifications for seamless integration into existing designs.
FAQ
What is the typical collector-emitter saturation voltage at 25 °C?
The typical VCE,sat is 1.50 V at 25 °C, with a maximum of 1.80 V under the same conditions.
Does the module include an integrated temperature sensor?
Yes, the module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C.
What is the maximum operating junction temperature?
The maximum operating junction temperature (Tvj op) is 175 °C.
