FFSH30120ADN-F155

Diode Arrays Overview

The FFSH30120ADN-F155 is a Silicon Carbide (SiC) Schottky Diode from onsemi's EliteSiC series, housed in a TO-247-3LD package. It features dual anodes with a common cathode configuration. Key electrical parameters include a peak repetitive reverse voltage of 1200 V and a continuous rectified forward current of 30 A per device (15 A per leg). The typical forward voltage is 1.45 V at 15 A and 25°C. It supports a maximum junction temperature of 175°C and offers avalanche rating capability up to 145 mJ.

Diode Arrays Feature Summary

• Eliminates reverse recovery current and forward recovery effects for superior switching performance.
• Features positive temperature coefficient characteristics that facilitate ease of paralleling.
• Provides high surge current capacity and robust thermal performance.
• Constructed using SiC technology for higher reliability compared to traditional silicon devices.

Diode Arrays Applications

• Switching Mode Power Supplies (SMPS)
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• General Purpose Power Switching Circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix -F155 corresponds to the tube packing method containing 30 units as documented in the official datasheet. Confirm the TO-247-3LD mechanical outline matches the required PCB footprint. Ensure compliance with RoHS and halogen-free requirements if mandated by the end application standards.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high-voltage blocking capabilities combined with low switching losses. The dual anode configuration allows for efficient implementation of full-bridge or half-bridge topologies within a single package. Consider the thermal resistance values to ensure adequate heat sinking for the intended power dissipation levels.

Diode Arrays Part Context

This device belongs to onsemi's EliteSiC family of Silicon Carbide Schottky Diodes. It utilizes advanced SiC technology to deliver faster operating frequencies and increased power density compared to conventional silicon rectifiers. The product line is designed to reduce system size, cost, and electromagnetic interference in modern power electronics applications.

Diode Arrays Replacement Considerations

Direct substitutes within the same EliteSiC series include the FFSH20120ADN-F155 and FFSH40120ADN-F155, which share identical packaging and pinout configurations but differ in current ratings. Verify that any alternative component meets the 1200 V reverse voltage requirement and fits the TO-247-3LD form factor.

Diode Arrays FAQ

Is the FFSH30120ADN-F155 avalanche rated?

Yes, the device is avalanche rated with a single pulse avalanche energy capability of 145 mJ under specified test conditions.

What is the maximum operating junction temperature?

The maximum junction temperature for this component is 175°C.

Does this diode exhibit reverse recovery current?

No, the Silicon Carbide Schottky construction ensures there is no reverse recovery current, resulting in cleaner switching waveforms.