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Product Detailed Parameters
- Description：IGBT 300V 120A TO-3P
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：300 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.4V @ 15V, 25A
- Power - Max：290 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：21 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The FGA120N30DTU is a high-power N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, now part of onsemi. It features a Non-Punch-Through (NPT) trench gate technology designed for robust performance in demanding power electronics applications. The device is housed in a TO-3P package suitable for through-hole mounting. Key electrical specifications include a collector-emitter voltage (Vces) of 300 V and a continuous collector current (Ic) of 120 A at 25°C. The maximum power dissipation is rated at 750 W, with an operating junction temperature range from -55°C to +150°C. The saturation voltage (Vcesat) is typically low to minimize conduction losses.
Feature Summary
- Utilizes NPT trench gate technology for superior switching characteristics and reduced switching losses.
- Designed for high avalanche energy capability and rugged operation under hard switching conditions.
- Features a TO-3P package that facilitates efficient thermal management and easy parallel operation.
Applications
- High-frequency induction heating systems
- Uninterruptible Power Supplies (UPS)
- Motor control drives and inverters
Procurement Notes
Verify the manufacturer origin carefully, as Fairchild Semiconductor's discrete semiconductor business was acquired by onsemi. Ensure the component markings and datasheet correspond to the specific legacy Fairchild part number rather than generic equivalents. Confirm the package type and pinout compatibility with your existing design before procurement.
Selection Notes
Select this component when a 300 V IGBT with high current handling capability is required. The 120 A rating makes it suitable for medium-to-high power applications. Consider the thermal resistance of the TO-3P package and ensure adequate heatsinking is provided to maintain junction temperatures within the specified limits during operation.
Part Context
This device belongs to the FGA series of high-power IGBTs from Fairchild Semiconductor. These components are engineered for industrial power conversion and motor drive applications. The series is known for balancing low conduction losses with fast switching speeds, making it a standard choice for reliable power electronic designs requiring robustness against overcurrent events.
Replacement Considerations
Check for direct replacements within the onsemi portfolio, such as other FGA series devices with similar voltage and current ratings. Verify that any substitute maintains the same TO-3P footprint and electrical characteristics, particularly Vcesat and switching times, to ensure circuit compatibility without redesign.
