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The FGA20S140P is a 1400 V, 20 A shorted-anode IGBT utilizing advanced field stop trench technology. It features a collector-emitter saturation voltage of 1.9 V at 20 A and 25°C case temperature. The device supports a maximum collector current of 40 A at 25°C and 60 A pulsed. Thermal resistance from junction to case is 0.55 °C/W. Operating junction temperature ranges from -55°C to +175°C. Total switching loss is 1.32 mJ at 25°C and 2.34 mJ at 175°C under specified test conditions.
Verify the specific ordering suffix against the official ON Semiconductor website to ensure compliance with current system requirements following the Fairchild integration. Confirm that the package marking matches the datasheet specifications. Validate authenticity through authorized distributors to avoid counterfeit components. Check for RoHS compliance status as indicated in the documentation.
Select this component for high-voltage soft-switching environments requiring low conduction losses. Ensure the gate drive circuit provides the necessary 15 V signal for optimal performance. Verify thermal management capabilities to maintain junction temperatures within the specified operating range during continuous operation.
This part belongs to the shorted-anode IGBT family designed by Fairchild Semiconductor, now integrated into ON Semiconductor's portfolio. It serves as a high-performance alternative to standard IGBTs in resonant converter topologies. The device leverages trench gate architecture to minimize switching losses while maintaining robust ruggedness.
Check the ON Semiconductor website for updated part numbers replacing Fairchild orderable parts. Verify pinout compatibility and thermal characteristics before substituting.