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Product Detailed Parameters
- Description：IGBT NPT 1200V 40A TO-3P
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 25A
- Power - Max：310 W
- Switching Energy：4.8mJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：200 nC
- Td (on/off) @ 25°C：60ns/170ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：350 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The FGA25N120ANDTU is a single NPT trench IGBT with an integrated fast recovery diode, housed in a TO-3P package. It features a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC) of 40 A at 25°C case temperature. The saturation voltage (VCE(sat)) is typically 2.5 V at IC = 25 A and VGE = 15 V. The device supports a maximum power dissipation of 310 W at 25°C and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- NPT technology for low conduction and switching losses
- Integrated CO-PAK fast recovery diode with typical reverse recovery time of 235 ns
- High input impedance suitable for direct gate drive
Applications
- Induction heating systems
- Uninterruptible power supplies (UPS)
- AC and DC motor controls
- General purpose inverters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical tolerances and packaging specifications. Ensure the component matches the required thermal resistance values for your heat sink design. Cross-reference the datasheet revision date to confirm the accuracy of the provided switching characteristics before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high voltage blocking capability combined with moderate current handling. Consider the thermal resistance from junction to case when designing the cooling system, as power dissipation decreases significantly at elevated case temperatures. Verify that the gate drive voltage aligns with the specified 15 V operating condition for optimal saturation performance.
Part Context
This part belongs to the AND series of IGBTs developed by Fairchild Semiconductor, which is now part of onsemi. The series utilizes Non-Punch-Through (NPT) technology to balance switching speed and conduction efficiency. It is designed as a discrete solution for medium-power industrial applications where robustness and ease of parallel operation are required.
Replacement Considerations
Direct pin-to-pin replacements may include other 1200V, 25A class IGBTs in TO-3P packages such as the FGH25T120SMD-F155, though thermal and electrical parameters must be verified. Always check the reverse recovery characteristics of the integrated diode to ensure compatibility with the existing circuit topology.
FAQ
What is the typical reverse recovery time of the integrated diode?
The typical reverse recovery time (trr) of the integrated fast recovery diode is 235 ns at a case temperature of 25°C.
How does the collector current rating change with case temperature?
The continuous collector current is rated at 40 A at a case temperature of 25°C, but it derates to 25 A at a case temperature of 100°C.
What is the maximum allowable gate-emitter voltage?
The absolute maximum rating for the gate-emitter voltage (VGES) is ±20 V.
