FGA25N120ANTDTU-F109

Description：IGBT NPT/TRENCH 1200V 50A TO-3P
Series：-

SKU:c45a8ceb7693 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT NPT/TRENCH 1200V 50A TO-3P
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：NPT and Trench
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.65V @ 15V, 50A
Power - Max：312 W
Switching Energy：4.1mJ (on), 960µJ (off)
Input Type：Standard
Gate Charge：200 nC
Td (on/off) @ 25°C：50ns/190ns
Test Condition：600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：350 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

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FGA25N120ANTDTU-F109

Overview

The FGA25N120ANTDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Non-Punch-Through (NPT) Trench technology and is housed in a TO-3P-3 package for through-hole mounting. The device features a collector-emitter voltage (Vces) of 1200 V and a continuous collector current (Ic) of 50 A at 25°C. Maximum power dissipation is rated at 312 W, with a collector-emitter saturation voltage of 2.65 V at Ic = 50 A. The operating junction temperature range spans from -55°C to +150°C.

Feature Summary

Incorporates NPT Trench technology for superior conduction and switching performance.
Designed for high avalanche durability and ease of parallel operation.
Optimized for resonant or soft-switching applications.

Applications

Solar photovoltaic multilevel inverters
Resonant or soft-switching power converters
Industrial motor drives

Procurement Notes

Verify the specific suffix against official datasheets, as variations may indicate different tape-and-reel packaging or testing criteria. Confirm RoHS compliance status directly with the manufacturer documentation. Ensure the supplier provides valid traceability records for industrial-grade components.

Selection Notes

Select this component for high-voltage applications requiring robust thermal performance and low saturation voltage. The TO-3P-3 package facilitates efficient heat sinking for high-power density designs. Evaluate thermal resistance parameters to ensure adequate cooling solutions are integrated into the system architecture.

Part Context

This IGBT belongs to the FGA25N120ANTD series, representing onsemi's portfolio of high-voltage power semiconductors. The family is characterized by trench gate technology aimed at reducing switching losses while maintaining high blocking voltage capabilities suitable for demanding industrial environments.

Replacement Considerations

Cross-reference with other 1200V, 50A NPT IGBTs in TO-3P packages. Verify pinout compatibility and thermal characteristics before substitution. Consult official replacement guides for equivalent performance metrics.