FGA40N65SMD

Overview

The FGA40N65SMD is a Field Stop IGBT manufactured by onsemi, designed for high-efficiency power conversion. It features a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 40 A at TC = 100°C, with a peak pulsed current (ICM) of 120 A. The device operates within a junction temperature range of -55°C to +175°C and offers a maximum power dissipation of 349 W at TC = 25°C. Typical saturation voltage (VCE(sat)) is 1.9 V at IC = 40 A and VGE = 15 V. Switching losses include Eon of 0.82 mJ and Eoff of 0.26 mJ under standard test conditions. It utilizes a TO-3P-3LD (TO-3PN) through-hole package.

Feature Summary

• Utilizes novel field stop technology to optimize performance for applications requiring low conduction and switching losses.
• Features a positive temperature coefficient for collector current, facilitating easy parallel operation without derating.
• Provides fast switching characteristics combined with tight parameter distribution for consistent performance across devices.

Applications

• Solar inverters
• Uninterruptible Power Supplies (UPS)
• Welders
• Induction heating systems
• Telecom power supplies
• Energy Storage Systems (ESS)

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details, as tube quantities may vary. Ensure compliance with RoHS standards and lead-free requirements specified in the datasheet. Confirm thermal management capabilities align with the maximum junction temperature rating of 175°C during system design validation.

Selection Notes

Select this component when designing circuits that require a 650 V blocking capability with moderate current handling up to 40 A. Consider the thermal resistance values and the need for adequate heatsinking to maintain junction temperatures below the 175°C limit. Evaluate gate drive requirements based on the specified threshold voltage and total gate charge parameters for optimal switching performance.

Part Context

This device belongs to onsemi's second-generation Field Stop IGBT series. It is engineered to deliver superior efficiency compared to conventional trench IGBTs, specifically targeting modern power electronics where minimizing energy loss during both conduction and switching transitions is critical for overall system performance and reliability.

Replacement Considerations

Direct pin-compatible replacements should be verified against electrical ratings. Devices from other manufacturers offering similar 650 V / 40 A specifications in a TO-3PN package may serve as alternatives if their switching times and saturation voltages match the original design constraints.

FAQ

What is the typical saturation voltage at full load?

The typical collector-emitter saturation voltage (VCE(sat)) is 1.9 V when measured at a collector current of 40 A and a gate-emitter voltage of 15 V.

Can multiple units be operated in parallel?

Yes, the device exhibits a positive temperature coefficient for collector current, which allows for stable parallel operation without the risk of thermal runaway.

What is the maximum allowable junction temperature?

The maximum operating junction temperature (TJ) for the FGA40N65SMD is rated at 175°C.