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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-3PN
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
- Power - Max：268 W
- Switching Energy：1.01mJ (on), 297µJ (off)
- Input Type：Standard
- Gate Charge：72.2 nC
- Td (on/off) @ 25°C：19.2ns/65.6ns
- Test Condition：400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr)：31.8 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
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Overview
The FGA40T65SHD is a single N-channel Field Stop Trench Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a TO-3PN through-hole package designed for high-power switching applications. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 40 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCEsat) of 2.5 V. It supports a maximum power dissipation (Pd) of 349 W and operates within a junction temperature range from -55°C to +175°C. The gate-emitter voltage limits are specified between -20 V and +20 V.
Feature Summary
- Field Stop Trench technology for optimized switching performance
- High thermal stability with extended operating temperature range
- Robust packaging for high-power industrial environments
Applications
- Industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix and manufacturer documentation to confirm exact electrical tolerances and compliance status. Ensure the component matches the required pinout and thermal characteristics for the target PCB layout. Cross-reference official datasheets for any updates regarding RoHS or REACH compliance declarations before finalizing procurement orders.
Selection Notes
Select this component when a 650 V rated IGBT with moderate current handling is required. Compare the 40 A continuous current rating against peak load requirements. Evaluate the 2.5 V saturation voltage for conduction loss calculations. Consider the TO-3PN package constraints for thermal management and mechanical mounting in the final assembly design.
Part Context
This part belongs to the Field Stop series of IGBTs from onsemi, which utilizes trench gate technology to reduce switching losses. It is distinct from higher-current variants like the FGH60T65SHD, offering a balance between cost and performance for mid-range power applications. The TO-3PN package provides a standardized form factor for legacy and modern industrial designs.
Replacement Considerations
Direct substitutes may include other 650 V, 40 A Field Stop Trench IGBTs from onsemi such as the FGH40T65SHDF. Verify pin compatibility and thermal resistance values before substitution.
