FGA50N100BNTD2

Overview

The FGA50N100BNTD2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 1000 V and a continuous collector current rating of 50 A. The device utilizes proprietary trench design and advanced Non-Punch-Through (NPT) technology to deliver superior conduction and switching performance. It is housed in a TO-3P through-hole package with a power dissipation capacity of 156 W.

Feature Summary

• Utilizes proprietary trench design for enhanced electrical characteristics
• Employs advanced Non-Punch-Through (NPT) technology
• Provides superior conduction and switching performance

Applications

• Industrial motor drives
• Power supply systems
• Inverter circuits

Procurement Notes

Verify the production status carefully, as documentation indicates this part may be obsolete or discontinued by Fairchild Semiconductor prior to its acquisition by onsemi. Confirm availability through authorized distributors and check for valid replacement part numbers if new production units are required for manufacturing.

Selection Notes

Select this component for high-voltage applications requiring robust switching capabilities. Ensure the thermal management system supports the 156 W dissipation rating within the TO-3P package constraints. Verify gate drive requirements align with the specific switching characteristics defined in the official datasheet for optimal performance.

Part Context

This IGBT belongs to onsemi's portfolio of discrete semiconductor devices, leveraging technologies inherited from Fairchild Semiconductor. The product line focuses on high-power applications, utilizing advanced silicon processing techniques to improve efficiency and reliability in demanding industrial and commercial environments.

Replacement Considerations

Check for direct substitutes with matching 1000V/50A ratings and TO-3P packaging. Consult official substitution guides for equivalent NPT trench IGBTs.