SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FGA50N100BNTTU is an N-channel IGBT manufactured by Fairchild Semiconductor, housed in a TO-247 package. It features a maximum collector-emitter voltage of 1000 V and a continuous collector current of 50 A at 25 °C. The device has a typical saturation voltage of 2.6 V at 50 A. Key switching parameters include a turn-on delay time of 130 ns and a fall time of 100 ns. Thermal characteristics specify a maximum junction temperature of 175 °C and a power dissipation rating of 480 W.
Verify the specific suffix 'NTTU' against official datasheets to confirm pinout configuration and internal diode specifications. Ensure compatibility with existing heatsinking requirements given the 480 W power rating. Confirm RoHS compliance status through manufacturer documentation prior to integration.
Select this component for high-voltage applications requiring 1000 V blocking capability. Evaluate thermal management solutions to maintain junction temperatures below 175 °C under full load conditions. Compare switching losses against alternative devices if high-frequency operation is required.
This part belongs to Fairchild's high-power IGBT portfolio designed for industrial power conversion. It complements lower voltage variants by offering enhanced blocking capabilities for mains-connected or high-bus-voltage systems. The TO-247 package facilitates direct mounting to chassis heat sinks for effective thermal transfer.
Check for equivalents such as the FGA50N120ANTD for higher voltage ratings. Verify pin compatibility with the FGA50N100SNDL variant. Ensure substitute parts match the 1000 V rating and 50 A current handling.