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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-3PF-3
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
- Power - Max：94 W
- Switching Energy：132µJ (on), 62µJ (off)
- Input Type：Standard
- Gate Charge：75 nC
- Td (on/off) @ 25°C：17.8ns/81.6ns
- Test Condition：400V, 10A, 6Ohm, 15V
- Reverse Recovery Time (trr)：274 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3 Full Pack
- Supplier Device Package：TO-3PF-3
- Grade：-
- Qualification：-
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Overview
The FGAF40S65AQ is a Field Stop Trench IGBT manufactured by onsemi, rated for 650 V collector-emitter voltage and 40 A continuous collector current. It utilizes trench gate technology to achieve low saturation voltage and fast switching characteristics. The device features an isolated thermal pad design for efficient heat dissipation in high-power applications. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.1 V at 40 A and a typical turn-off energy of 18 mJ at 600 V and 40 A. The component is housed in a TO-247AD package with a solderable baseplate.
Feature Summary
- Field Stop Trench IGBT technology for optimized performance
- Low saturation voltage for reduced conduction losses
- Fast switching capabilities with controlled turn-off behavior
- Isolated thermal pad for enhanced thermal management
Applications
- High-frequency power supplies
- Motor drive inverters
- Uninterruptible power systems (UPS)
- Induction heating equipment
Procurement Notes
Verify the specific suffix 'AQ' against the official onsemi datasheet to confirm any special screening or testing requirements. Ensure the ordering part number matches the exact package variant and terminal finish specified in the latest documentation. Cross-reference the manufacturer's date code and lot traceability if required for your supply chain quality standards.
Selection Notes
Select this component when a 650 V rating and 40 A current capacity are required for high-efficiency switching applications. Consider the TO-247AD package for through-hole mounting and robust thermal performance. Evaluate the trade-off between the low saturation voltage and switching energy based on the specific operating frequency and load conditions of the target circuit design.
Part Context
This IGBT belongs to onsemi's field stop trench family, designed to replace older planar technologies. It offers improved ruggedness and lower losses compared to standard IGBTs. The FGAF series is engineered for industrial and consumer power conversion markets where efficiency and reliability are critical performance metrics.
Replacement Considerations
Check for direct pin-compatible alternatives such as the FGH40T65SHD or FGHL40S65UQ from onsemi. Verify that substitute devices match the 650 V / 40 A ratings and TO-247AD package dimensions. Confirm that the replacement's saturation voltage and switching energy parameters meet or exceed the original design specifications.
