SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FGB40N6S2 is a Field-Stop IGBT manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It features a maximum collector-emitter voltage (Vces) of 600 V and a continuous collector current (Ic) of 40 A at case temperature. The device utilizes field-stop technology to achieve low saturation voltage characteristics. Key electrical parameters include a gate-emitter threshold voltage (Vge(th)) of 6 V measured at 250 uA with Vces=600V and Ic=80A conditions, and a typical saturation voltage (Vce(sat)) of 1.9 V under specified test conditions. The component is housed in a TO-247AB package.
Verify the manufacturer origin carefully as Fairchild Semiconductor was acquired by ON Semiconductor. Confirm that the specific marking and datasheet align with the legacy Fairchild specifications rather than updated ON Semi revisions. Ensure the package type matches the required thermal management design for the target application.
Select this component when a 600 V rating and 40 A continuous current capability are required in a TO-247 package. Consider the trade-off between the low saturation voltage and switching speed inherent to Field-Stop technology. Verify gate drive requirements against the specified threshold voltage to ensure reliable turn-on across the operating temperature range.
This device belongs to the Fairchild FGH/FGP series of high-power IGBTs designed for industrial applications. It represents the transition period where Fairchild's proprietary Field-Stop technology was integrated into standard discrete packages before full corporate integration into ON Semiconductor's product portfolio.
Potential substitutes include the FGH40N60SMD or other 600V 40A Field-Stop IGBTs from ON Semiconductor. Verify pinout compatibility and thermal resistance values before substitution.