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Product Detailed Parameters
- Description：IGBT 600V 75A TO-263
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 20A
- Power - Max：290 W
- Switching Energy：115µJ (on), 195µJ (off)
- Input Type：Standard
- Gate Charge：35 nC
- Td (on/off) @ 25°C：8ns/35ns
- Test Condition：390V, 20A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The FGB40N6S2T is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the SMPS II series, manufactured by Fairchild Semiconductor. It features a collector-emitter voltage rating of 600V and a continuous collector current capacity of 75A, with a pulsed current rating of 180A. The device has a maximum power dissipation of 290W and a typical collector-emitter saturation voltage of 1.9V. It is housed in a surface-mount TO-263AB (D2PAK) package with two tabs for thermal management.
Feature Summary
- High-voltage switching capability with 600V blocking rating
- Robust current handling with 75A continuous and 180A pulsed ratings
- Optimized for switch-mode power supply applications
- Surface-mount D2PAK package design for efficient thermal performance
Applications
- Switch-mode power supplies (SMPS)
- Motor drive circuits
- Power conversion systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as required by project specifications. Note that this part number may be listed as obsolete; check for active inventory or valid replacement alternatives before finalizing procurement plans.
Selection Notes
Select this IGBT for applications requiring high voltage isolation and moderate to high current switching. Ensure the thermal design accommodates the 290W power dissipation limit. Verify gate drive requirements align with the +/- 20V maximum gate-emitter voltage specification.
Part Context
This component belongs to Fairchild's SMPS II series of N-channel IGBTs, designed specifically for efficient power conversion. It complements other devices in the family like the FGP40N6S2, offering similar electrical characteristics but in a surface-mount package suitable for automated assembly processes.
Replacement Considerations
Check for cross-reference parts with identical 600V/75A ratings and D2PAK packaging. Consult official substitution guides for pin-compatible alternatives if the original part is discontinued.
