SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FGD2736G3-F085 is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the ECOSPARK1 IGN series, manufactured by onsemi. It utilizes silicon technology and is housed in a DPAK-3 (TO-252-3) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 360 V and a continuous collector current (Ic) of 18 A. The device exhibits a collector-emitter saturation voltage of 1.65 V and supports a power dissipation (Pd) of 150 W. Maximum gate-emitter voltage ratings are specified at -10 V and +10 V.
This component has reached End-of-Life status, indicating that onsemi will discontinue manufacturing. Availability is restricted, with distributors reporting limited or no stock in various regions. Verification of remaining inventory and final purchase orders should be conducted directly with authorized suppliers before integration into new designs.
Engineers selecting this part must account for its discontinued status when planning long-term production runs. The 360 V rating and 18 A current capacity define its operational limits within the circuit. Designers should verify thermal management requirements for the 150 W dissipation capability in the specific DPAK-3 enclosure configuration.
The FGD2736G3-F085 belongs to the broader ECOSPARK family of IGBTs offered by onsemi. This series focuses on efficiency improvements through advanced silicon technologies. The specific model integrates standard IGBT functionality within a compact surface-mount form factor suitable for automated assembly processes.
Publicly confirmed substitute part numbers are not available in the provided documentation due to the product's end-of-life status. Engineers should consult onsemi technical support or authorized distributors for qualified alternative components that match the 360 V, 18 A specifications and TO-252-3 footprint.