FGD3N60LSDTM-T

Overview

The FGD3N60LSDTM-T is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, housed in a D-PAK (TO-252AA) surface-mount package. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 6 A at 25°C case temperature. The device exhibits a low saturation voltage of 1.2 V typical at 3 A with a 10 V gate drive. Key electrical parameters include a maximum power dissipation of 40 W, a junction-to-case thermal resistance of 3.1 °C/W, and a total gate charge of 12.5 nC. Switching characteristics show a turn-on delay of 40 ns and a turn-off delay of 600 ns under standard test conditions.

Feature Summary

• High current capability combined with very low saturation voltage for efficient conduction
• High input impedance characteristic typical of insulated gate devices
• Integrated fast recovery body diode suitable for inductive load switching

Applications

• HID lamp ballasts and lighting control circuits
• Piezo fuel injection systems requiring precise high-voltage switching
• General-purpose hard-switching applications demanding low on-state losses

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape width and reel quantity. Confirm that the component meets required environmental standards like RoHS compliance before finalizing procurement specifications. Ensure the supplier provides valid traceability documents for quality assurance purposes.

Selection Notes

Select this component when a surface-mount IGBT with a 600 V rating and moderate current handling is required. Evaluate the thermal resistance and power dissipation limits relative to the expected operating ambient temperature. Consider the switching speed and gate charge requirements to ensure compatibility with the intended driver circuitry and frequency of operation.

Part Context

This part belongs to the FGD3N60LSD series of IGBTs from onsemi. The series is designed to provide low conduction losses in compact packages. The D-PAK form factor allows for automated surface-mount assembly while providing adequate thermal performance for medium-power applications compared to through-hole alternatives.

Replacement Considerations

Direct pin-compatible replacements must match the 600 V rating, 6 A current capacity, and TO-252AA package. Verify that any substitute maintains similar saturation voltage and switching energy values to preserve circuit efficiency and timing characteristics.