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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 50A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 25A
- Power - Max：428 W
- Switching Energy：1.74mJ (on), 560µJ (off)
- Input Type：Standard
- Gate Charge：225 nC
- Td (on/off) @ 25°C：40ns/490ns
- Test Condition：600V, 25A, 23Ohm, 15V
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGH25T120SMD-F155 is a single-channel silicon IGBT transistor from onsemi, designed for high-voltage switching applications. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 25 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.9 V and a gate-emitter leakage current of 400 nA. With a power dissipation rating of 428 W, it operates within a temperature range of -55°C to +175°C. Packaged in a TO-247G03-3 through-hole format, this component utilizes Field Stop Trench technology.
Feature Summary
- Field Stop Trench technology implementation for optimized switching performance
- High thermal stability supporting operation up to 175°C junction temperature
- Robust 1.2 kV blocking capability suitable for industrial power systems
Applications
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) systems
- High-frequency welding equipment
Procurement Notes
Verify the specific ordering suffix F155 against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Confirm RoHS compliance status directly with the supplier documentation. Check for any product change notices regarding manufacturing site or material composition updates before finalizing procurement specifications.
Selection Notes
Select this component when a 1.2 kV rating and 25 A continuous current are required in a TO-247 package. Ensure the application circuit can handle the 428 W power dissipation rating with appropriate heatsinking. Verify that the gate drive voltage limits align with the specified +/- 25 V maximum ratings to prevent device damage during operation.
Part Context
This part belongs to onsemi's discrete IGBT transistor lineup, specifically utilizing Field Stop Trench architecture. It serves as a standalone switching element distinct from integrated modules like the NXH series. The TO-247G03-3 package provides a standardized form factor for through-hole mounting in various power electronic designs.
Replacement Considerations
Direct substitutes must match the 1.2 kV / 25 A specification and TO-247G03-3 footprint. Verify equivalent saturation voltage and switching times. Cross-reference with other manufacturers' 1200V trench IGBTs in similar packages if availability is constrained.
