FGH30N6S2D

Description：IGBT 600V 45A TO-247-3
Series：-

SKU:540b64aa0761 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 45A TO-247-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：45 A
Current - Collector Pulsed (Icm)：108 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
Power - Max：167 W
Switching Energy：55µJ (on), 100µJ (off)
Input Type：Standard
Gate Charge：23 nC
Td (on/off) @ 25°C：6ns/40ns
Test Condition：390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)：46 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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FGH30N6S2D

Overview

The FGH30N6S2D is a 600V, SMPS II Series N-Channel IGBT with an integrated Anti-Parallel Stealth Diode. It features low gate charge (23 nC at VGE = 15V) and low plateau voltage (6.5V typical). The device supports continuous collector currents of 45 A at TC = 25°C and 20 A at TC = 110°C. Maximum ratings include a breakdown voltage of 600V, pulsed collector current of 108 A, and total power dissipation of 167 W at 25°C case temperature. Switching characteristics include a typical fall time of 90 ns at TJ = 125°C and UIS capability rated at 150 mJ.

Feature Summary

Low gate charge and low plateau voltage reduce gate drive power requirements and shorten delay times.
Integrated Anti-Parallel Stealth Diode provides fast switching speed and low conduction loss.
Rated for Uninterruptible Power Supply (UIS) operation to withstand avalanche energy.

Applications

Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies

Procurement Notes

Verify the datasheet revision level and manufacturer origin, as the component was originally produced by Fairchild Semiconductor. Confirm that the specific package variant matches the required thermal and mechanical constraints for the target application.

Selection Notes

Evaluate the operating frequency against the maximum safe operating area curves. Ensure the gate resistance selection aligns with the specified switching test conditions to maintain the expected turn-on and turn-off energy losses within acceptable limits.

Part Context

This component belongs to the SMPS II series of Low Gate Charge IGBTs. It combines the fast switching speed of previous generations with reduced gate charge and plateau voltage, making it suitable for high-voltage switched-mode power supply applications requiring low conduction loss and robust avalanche capability.