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The onsemi FGH40N65UFDTU-F085 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features a collector-emitter voltage (Vceo) of 650 V and a continuous collector current (Ic) of 40 A at 25°C, with an 80 A rating at case temperature. The device utilizes Field Stop technology to achieve low saturation voltage (1.8 V typical) and optimized switching performance. Packaged in a TO-247-3 through-hole housing, it supports a maximum power dissipation of 290 W and operates within a junction temperature range of -55°C to +150°C. The component holds AEC-Q101 qualification for automotive reliability.
Verify the specific suffix F085 against official datasheets to confirm packaging details, as ordering codes may indicate tube quantities or barcoding variations. Confirm availability status directly with authorized distributors, as supply levels fluctuate. Ensure compliance with RoHS directives and REACH regulations prior to integration into final assemblies.
Select this IGBT for designs requiring 650 V blocking capability with moderate current handling up to 40 A. Evaluate thermal resistance requirements given the 290 W dissipation limit in the TO-247-3 package. Consider the 1.8 V saturation voltage for efficiency calculations in hard-switching applications. Verify gate drive compatibility with standard IGBT control voltages.
This component belongs to the FGH40N65UF series from onsemi, which focuses on Field Stop trench IGBTs. The series targets high-efficiency power conversion systems. The F085 suffix typically denotes specific manufacturing or packaging attributes within the product line, distinguishing it from other variants like the TU version.
Direct replacements include the FGH40N65UFDTU without the F085 suffix if packaging differences are acceptable. Cross-reference with other 650 V, 40 A IGBTs from manufacturers such as Infineon or Mitsubishi, ensuring pinout and thermal characteristics match the TO-247-3 footprint.